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The NCP51705 driver is designed to primarily drive SiC MOSFET

transistors. To achieve the lowest possible conduction losses, the

driver is capable to deliver the maximum allowable gate voltage to the

SiC MOSFET device. By providing high peak current during turn−on

and turn−off, switching losses are also minimized. For improved

reliability, dV/dt immunity and even faster turn−off, the NCP51705

can utilize its on−board charge pump to generate a user selectable

negative voltage rail.

For full compatibility and to minimize the complexity of the bias

solution in isolated gate drive applications the NCP51705 also

provides an externally accessible 5 V rail to power the secondary side

of digital or high speed opto isolators.

The NCP51705 offers important protection functions such as

under−voltage lockout monitoring for the bias power and thermal

shutdown based on the junction temperature of the driver circuit.

特性 Features

• High Peak Output Current with Split Output Stages to allow

independent Turn−ON/Turn−OFF Adjustment;

♦ Source Capability: 6 A

♦ Sink Capability: 6 A

• Extended Positive Voltage Rating for Efficient SiC MOSFET

Operation during the Conduction Period

• User−adjustable Built−in Negative Charge Pump for Fast Turn−off

and Robust dV/dt Immunity

• Accessible 5 V Reference / Bias Rail for Digital Oscillator Supply

• Adjustable Under−Voltage Lockout

• Desaturation Function

• Thermal Shutdown Function (TSD)

• Small & Low Parasitic Inductance WQFN24 Package

Typical Applications

• Driving SiC MOSFET

• Industrial Inverters, Motor Drivers

• PFC, AC to DC and DC to DC Converters