98AON77284F中文资料安森美半导体数据手册PDF规格书

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop II Trench construction, and provides superior

performance in demanding switching applications, offering both low

on state voltage and minimal switching loss. The IGBT is well suited

for UPS and solar applications. Incorporated into the device is a soft

and fast co−packaged free wheeling diode with a low forward voltage.

特性 Features

• Extremely Efficient Trench with Field Stop Technology

• TJmax = 175°C

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• 5 s Short−Circuit Capability

• This is a Pb−Free Device

Typical Applications

• Solar Inverters

• Uninterruptible Power Supplies (UPS)

• Welding