98AON77284F中文资料安森美半导体数据手册PDF规格书

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop (FS) Trench construction, and provides

superior performance in demanding switching applications, offering

both low on state voltage and minimal switching loss.

特性 Features

• Extremely Efficient Trench with Field Stop Technology

• TJmax = 175°C

• Soft Fast Reverse Recovery Diode

• Optimized for High Speed Switching

• 5 s Short−Circuit Capability

• These are Pb−Free Devices

Typical Applications

• Solar Inverters

• Uninterruptible Power Supplies (UPS)

• Welding