98AON77284F中文资料安森美半导体数据手册PDF规格书

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Ultra Field Stop Trench construction, and provides

superior performance in demanding switching applications, offering

both low on−state voltage and minimal switching loss. The IGBT is

well suited for UPS and solar applications. Incorporated into the device

is a soft and fast co−packaged free wheeling diode with a low forward

voltage.

特性 Features

 Extremely Efficient Trench with Field Stop Technology

 TJmax = 175C

 Soft Fast Reverse Recovery Diode

 Optimized for High Speed Switching

 These are Pb−Free Devices

Typical Applications

 Solar Inverter

 Uninterruptible Power Inverter Supplies (UPS)

 Welding