MOSFET ??Power, Single N-Channel 40 V, 7.3 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：186.15 Kbytes 页数：7 Pages

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MOSFET ??Power, Single N-Channel 40 V, 12 m, 35 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C468NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：187.5 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifiers

These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB

文件：187.19 Kbytes 页数：6 Pages

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安森美半导体

MOSFET - Power, Single N-Channel 60 V, 1.2 m, 288 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C604NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.49 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifiers

These state−of−the−art devices have the following features: Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wetta

文件：211.53 Kbytes 页数：6 Pages

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MOSFET - Power, Single N-Channel, DFN5/DFNW5 60 V, 4.6 m, 92 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C645NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：237.87 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifiers

Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Uniqu

文件：146.43 Kbytes 页数：6 Pages

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安森美半导体

MOSFET - Power, Single N-Channel, SO8-FL 30 V, 1.15 m, 245 A

文件：185.24 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel 80 V, 20.7 m, 32 A

文件：187.79 Kbytes 页数：7 Pages

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MOSFET - Power, Single N-Channel, SO8-FL 30 V, 0.9 m, 298 A

文件：166.32 Kbytes 页数：7 Pages

ONSEMI

安森美半导体