Switch-mode Power Rectifiers

Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB Prefix for Automotive and Other Applications Requiring Uniqu

文件：194.8 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H858NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：186.44 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 20.7 m, 32 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H858NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.58 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET- Power, Single N-Channel, SO-8FL 60 V, 19.6 m, 28 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：187.41 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifiers

Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 150°C Operating Junction Temperature • Wettable Flacks Option Available • NRVB Prefix for Automotive and

文件：160.76 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Switch-mode Power Rectifiers

These state−of−the−art devices have the following features: • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • NRVB Prefix for Auto

文件：188.16 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

SWITCHMODE Power Rectifiers

Features  Low Power Loss / High Efficiency  New Package Provides Capability of Inspection and Probe After Board Mounting  Guardring for Stress Protection  Low Forward Voltage Drop  175C Operating Junction Temperature  Wettable Flacks Option Available  NRVB Prefix for Automotive and

文件：189.66 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Switch Mode Power Rectifiers

These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 175°C Operating Junction Temperature • NRVB

文件：380.97 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Switch Mode Power Rectifiers

These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After Board Mounting • Guardring for Stress Protection • Low Forward Voltage Drop • 150°C Operating Junction Temperature • Wetta

文件：142.22 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 4.5 m, 80 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C456NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：190.63 Kbytes 页数：7 Pages

ONSEMI

安森美半导体