MOSFET - Power, Single N-Channel 80 V, 9.4 m, 64 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H848NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：188.87 Kbytes 页数：8 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 0.7 m, 362 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS5C406NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：202.3 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel, DFN5/DFNW5 60 V, 1.3 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

文件：196.51 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel 80 V, 8.8 m, 59 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H848NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：188.04 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 60 V, 1.6 m, 230 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant

文件：178.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single, N-Channel, SO-8 FL 30 V, 38 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC−DC Converters

文件：181.55 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET 30 V, 147 A, Single N−Channel, SO−8 FL

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Dual Sided Cooling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Deliver

文件：165.58 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.9 m, 278 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

文件：183.14 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel, Logic Level, SO8FL 40 V, 0.7 m, 349 A

Features  Low RDS(on) to Minimize Conduction Loss  Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike  Low QG and Capacitance to Minimize Driving and Switching Loss  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications  High Switc

文件：185.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Synchronous Rectification (SR) in DC−DC and AC−DC • P

文件：231.88 Kbytes 页数：8 Pages

ONSEMI

安森美半导体