MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V

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Silicon Carbide Schottky Diode 650 V, 6 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

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Silicon Carbide Schottky Diode 650 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：396.36 Kbytes 页数：7 Pages

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, DPAK-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：415.57 Kbytes 页数：6 Pages

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, DPAK-3L

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：399.59 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode 650 V, 8 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：398.23 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode 650 V, 20 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：416.65 Kbytes 页数：6 Pages

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ECOSPARK Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT

General Description The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D−Pak (TO−252), as well as the industry standard D2−Pak (TO−263), and TO−262 and TO−220 plastic packages. This device is intend

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Ultrafast Dual Diode 12 A, 200 V

The RURD620CCS9A is an ultrafast dual diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industr

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ECOSPARK2 320 mJ, 450 V, N-Channel Ignition IGBT

General Description The FGB3245G2−F085 and FGD3245G2 are N−channel IGBTs designed in onsemi’s ECOSPARK−2 technology which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers out

文件：344.15 Kbytes 页数：10 Pages

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