ECOSPARK Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT

Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application

文件：2.37105 Mbytes 页数：11 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：429.67 Kbytes 页数：10 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：416.38 Kbytes 页数：10 Pages

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MOSFET - P-Channel Logic Level PowerTrench

文件：337.4 Kbytes 页数：7 Pages

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Silicon Carbide Schottky Diode 650 V, 20 A

文件：479.05 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

文件：465.51 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

文件：308.49 Kbytes 页数：7 Pages

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Silicon Carbide Schottky Diode

文件：439.46 Kbytes 页数：6 Pages

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EcoSPARK Ignition IGBT

文件：3.12145 Mbytes 页数：9 Pages

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MOSFET - P-Channel PowerTrench

文件：337.82 Kbytes 页数：7 Pages

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