98AON13810G中文资料安森美半导体数据手册PDF规格书

These are N−Channel logic level power MOSFETs manufactured

using the MegaFET process. This process, which uses feature sizes

approaching those of LSI integrated circuits gives optimum utilization

of silicon, resulting in outstanding performance. They were designed

for use with logic level (5 V) driving sources in applications such as

programmable controllers, switching regulators, switching converters,

motor relay drivers and emitter switches for bipolar transistors. This

performance is accomplished through a special gate oxide design

which provides full rated conductance at gate biases in the 3 V to 5 V

range, thereby facilitating true on−off power control directly from

logic circuit supply voltages.

Formerly developmental type TA09871.

Features

• 16 A, 50 V

• rDS(ON) = 0.047 

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5 V Gate Drives

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

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