MOSFET – P-Channel, POWERTRENCH -20 V, -56 A, 4 m

General Description This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for RDS(ON), switching performance and ruggedness. Features • Max RDS(on) = 4 m at VGS = −4.5 V, ID = −18 A • Max RDS(on) = 5.7 m at VGS = −2.5 V, ID = −16 A • Max R

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ONSEMI

安森美半导体

P?륝hannel Power Trench MOSFET

文件：340.78 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

N?륝hannel Shielded Gate POWERTRENCH MOSFET

文件：343.99 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

BGA

MARVELL

美满

上传：深圳市鹏兴电子有限公司

MARVELL

美满

上传：深圳市一线半导体有限公司