Gate Drivers, High-Speed, Low-Side, Dual 4-A

Description The FAN3223−25 family of dual 4 A gate drivers is designed to drive N−channel enhancement−mode MOSFETs in low-side switching applications by providing high peak current pulses during the short switching intervals. The driver is available with either TTL or CMOS input thresholds. I

文件：1.41935 Mbytes 页数：24 Pages

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Automotive Gate Driver IC, High and Low Side 600 V, 4.5 A

Description The FAN7191 / FAD7191 is a monolithic high− and low−side gate−driver IC, which can drive high speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse driving capability and minimum cross−conduction. ON Se

文件：464.71 Kbytes 页数：14 Pages

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600 V / 4 A, High-Side Automotive Gate Driver IC

Description The FAN7171-F085 is a monolithic high−side gate drive IC that can drive high−speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross−conduction. onsemi’s high−v

文件：1.47433 Mbytes 页数：11 Pages

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600 V / 4 A, High-Side Automotive Gate Driver IC

Description The FAN7171-F085 is a monolithic high−side gate drive IC that can drive high−speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross−conduction. Features • Floati

文件：1.40005 Mbytes 页数：11 Pages

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Earth Leakage Detector

文件：833.86 Kbytes 页数：13 Pages

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MOSFET - Power, Dual N- & P-Channel, SO8 100 V, 83 m, 4.5 A, -100 V, 131 m, -3.6 A

文件：360.7 Kbytes 页数：12 Pages

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