Field Stop Trench IGBT With Soft Fast Recovery Diode and VCESAT, VTH Binning 650 V, 160 A

Features  AEC−Q101 Qualified and PPAP Capable  Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A  Maximum Junction Temperature: TJ = 175C  Positive Temperature Co−Efficient  Tight Parameter Distribution  High Input Impedance  100% of the Parts are Dynamically Tes

文件：2.64198 Mbytes 页数：12 Pages

ONSEMI

安森美半导体

IGBT - Field Stop, Trench, Soft Fast Recovery Diode 650 V, 160 A

Benefits • Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications • Rugged Transient Reliability • Outstanding Parallel Operation Performance with Balance Current Sharing • Low EMI Features • AEC−Q101 Qualified and PPAP Capable • Very Low Saturat

文件：3.43739 Mbytes 页数：10 Pages

ONSEMI

安森美半导体

Field Stop Trench IGBT With Soft Fast Recovery Diode 650 V, 120 A

Features • Very Low Saturation Voltage : VCE(sat) = 1.5 V(Typ.) @ IC = 120 A • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient • Tight Parameter Distribution • High Input Impedance • 100% of the Parts are Dynamically Tested • Short Circuit Ruggedness > 6 s

文件：481.25 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

BGA

MARVELL

美满

上传：深圳市鹏兴电子有限公司

MARVELL

美满

上传：深圳市一线半导体有限公司