MOSFET ??Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 24 A, 125 m

General Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction l

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MOSFET ??Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 10 A, 360 m

General Description SuperFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction l

文件：498.76 Kbytes 页数：10 Pages

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Silicon Carbide Schottky Diode 650 V, 10 A

Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Sil

文件：467.2 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

文件：326.37 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

文件：345.6 Kbytes 页数：6 Pages

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Silicon Carbide Schottky Diode

文件：328.46 Kbytes 页数：6 Pages

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MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 180 m

文件：479.64 Kbytes 页数：10 Pages

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