98

型号：BZB784-C4V7；Package：SOT323；Voltage regulator double diodes

FEATURES •Totalpowerdissipation:max.350mW •Approx.5VZtolerance •Workingvoltagerange:nom.2.4to15V(E24range). APPLICATIONS •Generalregulationfunctions •ESDandsurgeprotection. DESCRIPTION Low-powervoltageregulatordiodesinasmallSOT323 (SC-70)package.

98

型号：BZB984-C4V7；Package：SOT663；Voltage regulator double diodes

1.Generaldescription Low-powervoltageregulatordiodesinaSOT663ultrasmallplasticSMDpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤425mW •Approximately5VZtolerance •UltrasmallflatplasticSMDpackage •Workingvoltagerangenominal2.4to15V(E24range)

9801D

型号：AUR9801DGD；Package：WDFN-3x3-10；LI-ION/LI POLYMER BATTERY CHARGER

Features CompleteChargerforSingle-CellLi-ionBatteries ChargesfromeitherACAdapterorUSBPort IntegratedPowerPassDevicewithCurrentSensing NoExternalBlockingDiodeRequired Pre-chargeConditionwithSafetyTiming ChargerVoltageAccuracy:0.6 ProgrammableCurrentLimitupto

9811D

型号：AUR9811DGD；Package：WDFN-3x3-10；1A LI-ION/LI POLYMER BATTERY LINEAR CHARGER

Features CompleteChargerforSingle-CellLi-IonBatteries ChargesfromEitherACAdapterorUSBPort IntegratedPowerPassDevicewithCurrentSensing NoExternalBlockingDiodeRequired Pre-chargeConditionwithSafetyTiming ChargerVoltageAccuracy:1 ProgrammableCurrentLimitupto1A

987510A

型号：BUK9875-100A；Package：SOT223；N-channel TrenchMOS logic level FET

1.Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits •Low

987510

型号：BUK9875-100CU；Package：SOT223；N-channel TrenchMOS logic level FET

1.Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits •Low

988055A

型号：BUK9880-55A；Package：SOT223；N-channel TrenchMOS logic level FET

1.Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits •Low

98055

型号：BUK9880-55CU；Package：SOT223；N-channel TrenchMOS logic level FET

1.Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits •AEC

988055

型号：BUK9880-55CU；Package：SOT223；N-channel TrenchMOS logic level FET

1.Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproducthasbeendesignedandqualifiedto theappropriateAECstandardforuseinautomotivecriticalapplications. 2.Featuresandbenefits •Low

98H540

型号：BUK9M8R5-40H；Package：LFPAK33；N-channel 40 V, 8.5 mΩ logic level MOSFET in LFPAK33

1.Generaldescription AutomotivequalifiedlogiclevelN-channelMOSFETinanLFPAK33packageusingTrench9 TrenchMOStechnology.ThisproducthasbeendesignedandqualifiedtoAEC-Q101foruseinhigh performanceautomotiveapplications. 2.Featuresandbenefits •Fullyautomotivequali