丝印：98；Package：SOT323；Voltage regulator double diodes

FEATURES • Total power dissipation: max. 350 mW • Approx. 5 VZ tolerance • Working voltage range: nom. 2.4 to 15 V (E24 range). APPLICATIONS • General regulation functions • ESD and surge protection. DESCRIPTION Low-power voltage regulator diodes in a small SOT323 (SC-70) package.

文件：192.4 Kbytes 页数：9 Pages

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安世安世半导体(中国)有限公司

丝印：98；Package：SOT663；Voltage regulator double diodes

1. General description Low-power voltage regulator diodes in a SOT663 ultra small plastic SMD package. 2. Features and benefits • Total power dissipation: ≤ 425 mW • Approximately 5 VZ tolerance • Ultra small flat plastic SMD package • Working voltage range nominal 2.4 to 15 V (E24 range)

文件：275.51 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：9801D；Package：WDFN-3x3-10；LI-ION/LI POLYMER BATTERY CHARGER

Features Complete Charger for Single-Cell Li-ion Batteries Charges from either AC Adapter or USB Port Integrated Power Pass Device with Current Sensing No External Blocking Diode Required Pre-charge Condition with Safety Timing Charger Voltage Accuracy: 0.6 Programmable Current Limit up to

文件：599.49 Kbytes 页数：14 Pages

DIODES

美台半导体

丝印：9811D；Package：WDFN-3x3-10；1A LI-ION/LI POLYMER BATTERY LINEAR CHARGER

Features Complete Charger for Single-Cell Li-Ion Batteries Charges from Either AC Adapter or USB Port Integrated Power Pass Device with Current Sensing No External Blocking Diode Required Pre-charge Condition with Safety Timing Charger Voltage Accuracy: 1 Programmable Current Limit up to 1A

文件：551.44 Kbytes 页数：14 Pages

DIODES

美台半导体

丝印：987510A；Package：SOT223；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Low

文件：721.85 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：987510；Package：SOT223；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Low

文件：721.85 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

丝印：988055A；Package：SOT223；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Low

文件：740.57 Kbytes 页数：13 Pages

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安世安世半导体(中国)有限公司

丝印：988055；Package：SOT223；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • Low

文件：740.57 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：98055；Package：SOT223；N-channel TrenchMOS logic level FET

1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits • AEC

文件：346.58 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

丝印：98H540；Package：LFPAK33；N-channel 40 V, 8.5 mΩ logic level MOSFET in LFPAK33

1. General description Automotive qualified logic level N-channel MOSFET in an LFPAK33 package using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101 for use in high performance automotive applications. 2. Features and benefits • Fully automotive quali

文件：280.95 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司