丝印：925B；Package：SMB；3.0W SURFACE MOUNT ZENER DIODE

Glass Passivated Die Construction 3.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5 Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference Plastic Case Material has UL Flammability Classification Rating 94V-0

文件：105.55 Kbytes 页数：5 Pages

WTE

Won-Top Electronics

丝印：925B；Package：DO-214AA；Silicon Planar Zener Diodes

FEATURES ♦ Total power dissipation: Max. 3 W. ♦ Wide zener reverse voltage range 3.3V to 200V. ♦ plastic package suitable for surface mounted design. ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: DO-214AA/SMB ♦ Terminals: Solderable per MIL-STD-750, Method

文件：423.4 Kbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：925B；Package：SMB；SURFACE MOUNT SILICON ZENER DIODES

Vz : 3.3 - 200 Volts, Pd : 3 Watts Features • Total power dissipation: Max. 3 W. • Wide zener reverse voltage range 3.3V to 200V. • Small plastic package suitable for surface mounted design. Mechanical Data • Case: SMB • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight:

文件：661.67 Kbytes 页数：4 Pages

FS

丝印：925B；Package：SMB；Surface Mount Zener Voltage Regulators

FEATURES • Total power dissipation: Max. 3 W. • Wide zener reverse voltage range 3.3V to 200V. • Small plastic package suitable for surface mounted design. MECHANICAL DATA • Case: SMB • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.095g / 0.0034oz

文件：364.22 Kbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：925B；Package：SMB；3 Watt Plastic Surface Mount Zener Voltage Regulators

3 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of 3 Watt Zener diodes offers the following advantages. Features •Zener Voltage Range − 3.3 V to 200 V •ESD Rating of Class 3 (>16 kV) per Human Body Model •Flat Handling Surface for Accurate Placement •Package Desi

文件：154.15 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：92540RA；Package：LFPAK56D；Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology

1. General description Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. 2. Features and benefits • Ful

文件：342.53 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：92560E；Package：LFPAK56；N-channel 60 V, 25 mΩ logic level MOSFET in LFPAK56

1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive aval

文件：741.35 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：92580E；Package：LFPAK56；N-channel 80 V, 27 mΩ logic level MOSFET in LFPAK56

1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive aval

文件：768.74 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：925B；Package：SMA；Silicon Planar Zener Diodes

FEATURES + Total power dissipation: Max. 1.5 W. + Wide zener reverse voltage range 3.6V to 200V. « Small plastic package suitable for surface mounted design.

文件：1.52535 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：9251V；Package：PG-TSON-8；High Speed CAN Transceiver

Features • Fully compliant to ISO 11898-2 (2016) and SAE J2284-4/-5 • Reference device and part of Interoperability Test Specification for CAN Transceiver • Guaranteed loop delay symmetry for CAN FD data frames up to 5 MBit/s • Very low electromagnetic emission (EME) allows the use without a

文件：640.24 Kbytes 页数：30 Pages

INFINEON

英飞凌