丝印：913410E；Package：LFPAK56D；Dual N-channel 100 V, 159 mΩ logic level MOSFET

1. General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Dual MOSFET • Q101

文件：757.46 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：91360RA；Package：LFPAK56D；Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology

1. General description Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. 2. Features and benefits • Ful

文件：296.78 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：91380L；Package：SOT1210；N-channel 80 V, 13 mOhm logic level MOSFET in LFPAK33

1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. 2. Features and benefits • Logic-level compatible • Trench1

文件：313.57 Kbytes 页数：12 Pages

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安世

丝印：91360EL；Package：SOT669；Single N-channel 60 V, 7.9 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology

1. General description Single, logic level, N-channel MOSFET in LFPAK56 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag applications. 2. Features and benefits • Fully automotive qualified t

文件：314.21 Kbytes 页数：12 Pages

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安世

丝印：91302B；Package：WLCSP；Dual/Single Output Power Management IC

Features • Dual output 3+1 or 2+2, or single output 4-phase • 2.5V to 5.5V supply voltage • 5A per phase output current capability • Small solution size • High efficiency (94.7 peak for 3.8V VIN, 1.8V VOUT, L = 470nH) • Low IQ in low power mode • Proprietary control scheme reduces the outp

文件：3.15113 Mbytes 页数：80 Pages

RENESAS

瑞萨

丝印：913B；Package：SMA；Silicon Planar Zener Diodes

文件：463.41 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：91360E；Package：LFPAK56D；Dual N-channel 60 V, 12.5 m廓 logic level MOSFET

文件：725 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：913A；Package：DO214AC；Surface Mount Silicon Zener Diodes

文件：612.4 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：913A；Package：DO-214AC；PLASTIC-ENCAPSULATE ZENER DIODE

文件：512.57 Kbytes 页数：3 Pages

NIUHANG

纽航电子

色环/插件电感

Bourns

伯恩斯