丝印：90；Package：SOT-323FL；NPN 400mA 20V Digital Transistor

文件：1.09503 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：9053801PA；Package：CDIP；QUAD SCHOTTKY DIODE ARRAY

FEATURES Matched, Four-Diode Monolithic Array High Peak Current Low-Cost MINIDIP Package Low-Forward Voltage Parallelable for Lower VF or Higher IF Fast Recovery Time Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as in

文件：250.03 Kbytes 页数：9 Pages

TI

德州仪器

丝印：9053801VPA；Package：CDIP；QUAD SCHOTTKY DIODE ARRAY

FEATURES Matched, Four-Diode Monolithic Array High Peak Current Low-Cost MINIDIP Package Low-Forward Voltage Parallelable for Lower VF or Higher IF Fast Recovery Time Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as in

文件：250.03 Kbytes 页数：9 Pages

TI

德州仪器

丝印：9053801VPA；Package：CDIP；QUAD SCHOTTKY DIODE ARRAY

FEATURES Matched, Four-Diode Monolithic Array High Peak Current Low-Cost MINIDIP Package Low-Forward Voltage Parallelable for Lower VF or Higher IF Fast Recovery Time Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as in

文件：250.03 Kbytes 页数：9 Pages

TI

德州仪器

丝印：9065002PA；Package：CDIP；High Efficiency Regulator Controller

FEATURES · Complete Control for a High Current, Low Dropout, Linear Regulator · Fixed 5V or Adjustable Output Voltage · Accurate 2.5A Current Limiting with Foldback · Internal Current Sense Resistor · Remote Sense for Improved Load Regulation · External Shutdown · Under-Voltage Lockout a

文件：482.5 Kbytes 页数：8 Pages

TI

德州仪器

丝印：9095801QPA；Package：CDIP；EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

Excellent Output Drive Capability VO = ± 2.5 V Min at RL = 100 W, VCC± = ± 5 V VO = ± 12.5 V Min at RL = 600 W, VCC± = ± 15 V Low Supply Current . . . 280 mA Typ Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/ms Typ Gain-Bandwidth Product = 6.5

文件：586.84 Kbytes 页数：33 Pages

TI

德州仪器

丝印：9095802QPA；Package：CDIP；EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

Excellent Output Drive Capability VO = ± 2.5 V Min at RL = 100 W, VCC± = ± 5 V VO = ± 12.5 V Min at RL = 600 W, VCC± = ± 15 V Low Supply Current . . . 280 mA Typ Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/ms Typ Gain-Bandwidth Product = 6.5

文件：586.84 Kbytes 页数：33 Pages

TI

德州仪器

丝印：9095803QPA；Package：CDIP；EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

Excellent Output Drive Capability VO = ± 2.5 V Min at RL = 100 W, VCC± = ± 5 V VO = ± 12.5 V Min at RL = 600 W, VCC± = ± 15 V Low Supply Current . . . 280 mA Typ Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/ms Typ Gain-Bandwidth Product = 6.5

文件：586.84 Kbytes 页数：33 Pages

TI

德州仪器

丝印：901；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：933.76 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：904AI02L；Package：TSSOP；Low Skew, 1-to-4, Crystal-to-LVCMOS/LVTTL Fanout Buffer

Features • Four LVCMOS / LVTTL outputs, 19 output impedance at VDD = VDDO = 3.3V • Two crystal oscillator input pairs LVCMOS / LVTTL clock input • Crystal input frequency range: 12MHz – 38.88MHz • Output frequency: 200MHz (maximum) • Output skew: 40ps (maximum) at VDD = VDDO = 3.3V • RMS

文件：408.61 Kbytes 页数：16 Pages

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