丝印：90；Package：Flip-chip,9bumps；1.2 W audio power amplifier with active-low standby mode

Features  Operating range from VCC = 2.2 V to 5.5 V  1.2 W output power at VCC = 5 V, THD = 1%, F = 1 kHz, with 8 load  Ultra-low consumption in standby mode (10 nA)  62 dB PSRR at 217 Hz in grounded mode  Near-zero pop and click  Ultra-low distortion (0.1%)  Unity gain s

文件：652.75 Kbytes 页数：33 Pages

STMICROELECTRONICS

意法半导体

丝印：90；Package：SOT-323FL；NPN 400mA 20V Digital Transistor

文件：1.09503 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：9053801PA；Package：CDIP；QUAD SCHOTTKY DIODE ARRAY

FEATURES Matched, Four-Diode Monolithic Array High Peak Current Low-Cost MINIDIP Package Low-Forward Voltage Parallelable for Lower VF or Higher IF Fast Recovery Time Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as in

文件：250.03 Kbytes 页数：9 Pages

TI

德州仪器

丝印：9053801VPA；Package：CDIP；QUAD SCHOTTKY DIODE ARRAY

FEATURES Matched, Four-Diode Monolithic Array High Peak Current Low-Cost MINIDIP Package Low-Forward Voltage Parallelable for Lower VF or Higher IF Fast Recovery Time Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as in

文件：250.03 Kbytes 页数：9 Pages

TI

德州仪器

丝印：9053801VPA；Package：CDIP；QUAD SCHOTTKY DIODE ARRAY

FEATURES Matched, Four-Diode Monolithic Array High Peak Current Low-Cost MINIDIP Package Low-Forward Voltage Parallelable for Lower VF or Higher IF Fast Recovery Time Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as in

文件：250.03 Kbytes 页数：9 Pages

TI

德州仪器

丝印：9065002PA；Package：CDIP；High Efficiency Regulator Controller

FEATURES · Complete Control for a High Current, Low Dropout, Linear Regulator · Fixed 5V or Adjustable Output Voltage · Accurate 2.5A Current Limiting with Foldback · Internal Current Sense Resistor · Remote Sense for Improved Load Regulation · External Shutdown · Under-Voltage Lockout a

文件：482.5 Kbytes 页数：8 Pages

TI

德州仪器

丝印：9095801QPA；Package：CDIP；EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

Excellent Output Drive Capability VO = ± 2.5 V Min at RL = 100 W, VCC± = ± 5 V VO = ± 12.5 V Min at RL = 600 W, VCC± = ± 15 V Low Supply Current . . . 280 mA Typ Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/ms Typ Gain-Bandwidth Product = 6.5

文件：586.84 Kbytes 页数：33 Pages

TI

德州仪器

丝印：9095802QPA；Package：CDIP；EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

Excellent Output Drive Capability VO = ± 2.5 V Min at RL = 100 W, VCC± = ± 5 V VO = ± 12.5 V Min at RL = 600 W, VCC± = ± 15 V Low Supply Current . . . 280 mA Typ Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/ms Typ Gain-Bandwidth Product = 6.5

文件：586.84 Kbytes 页数：33 Pages

TI

德州仪器

丝印：9095803QPA；Package：CDIP；EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

Excellent Output Drive Capability VO = ± 2.5 V Min at RL = 100 W, VCC± = ± 5 V VO = ± 12.5 V Min at RL = 600 W, VCC± = ± 15 V Low Supply Current . . . 280 mA Typ Decompensated for High Slew Rate and Gain-Bandwidth Product AVD = 0.5 Min Slew Rate = 10 V/ms Typ Gain-Bandwidth Product = 6.5

文件：586.84 Kbytes 页数：33 Pages

TI

德州仪器

丝印：901；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：933.76 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

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