8A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

The UTC 8NM60A-FD is a Super Junction MOSFETStructure and is designed to have better characteristics, such asfast switching time, low gate charge, low on-state resistanceand a high rugged avalanche characteristics. This powerMOSFET is usually used at DC-DC, AC-DC converters forpower applications. RDS(ON) < 0.64 Ω @ VGS = 10V, ID = 4.0A Fast Switching Capability Avalanche Energy Tested Improved dv/dt Capability, High Ruggedness;

UTC

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N-Channel 650V (D-S) Power MOSFET

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VBSEMI

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N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

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STMICROELECTRONICS

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N-Channel 650V (D-S) Power MOSFET

文件：1.10714 Mbytes 页数：10 Pages

VBSEMI

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