8A, 600V N-CHANNEL SUPER-JUNCTION MOSFET

The UTC 8NM60-FD is a Super Junction MOSFET Structureand is designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and ahigh rugged avalanche characteristics. This power MOSFET isusually used at DC-DC, AC-DC converters for powerapplications. RDS(ON) < 0.82 Ω @ VGS = 10V, ID = 4.0A Fast Switching Capability Avalanche Energy Tested Improved dv/dt Capability, High Ruggedness;

UTC

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N-Channel 650V (D-S) Power MOSFET

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VBSEMI

微碧半导体

N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The

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STMICROELECTRONICS

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N-Channel 650V (D-S) Power MOSFET

文件：1.10714 Mbytes 页数：10 Pages

VBSEMI

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