N-CHANNEL POWER MOSFET

文件：1.93438 Mbytes 页数：8 Pages

SUNMATE

森美特

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件：192.55 Kbytes 页数：6 Pages

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N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件：192.55 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件：192.55 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件：192.55 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件：192.55 Kbytes 页数：6 Pages

UTC

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N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件：192.55 Kbytes 页数：6 Pages

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N-Channel MOSFET uses advanced trench technology

文件：1.43263 Mbytes 页数：5 Pages

DOINGTER

杜因特

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件：192.55 Kbytes 页数：6 Pages

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8A, 650V N-CHANNEL POWER MOSFET

The UTC 8N65K-MT is a high voltage and high current powerMOSFET designed to have better characteristics, such as fastswitching time, low gate charge, low on-state resistance and highrugged avalanche characteristics. This power MOSFET is usuallyused in high speed switching applications at power suppl • RDS(ON) < 1.4Ω@VGS = 10 V\n• Avalanche energy specified\n• Improved dv/dt capability, high ruggedness;

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