8A, 500V N-CHANNEL POWER MOSFET

The N-Channel enhancement mode silicon gate powerMOSFET is designed for high voltage, high speed powerswitching applications such as switching regulators, switchingconverters, solenoid, motor drivers, relay drivers. Low RDS(ON)< 0.87Ω @ VGS=10V. ID = 4.4A Single Pulse Avalanche Energy Rated Fast Switching Speeds Linear Transfer Characteristics High Input Impedance;

UTC

友顺

N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m

Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/LED TV • Uninterruptible Power Supply • Lighting • AC-DC

文件：882.62 Kbytes 页数：10 Pages

Fairchild

仙童半导体

500V, 8A N-Channel MOSFET

文件：147.37 Kbytes 页数：6 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

文件：305.65 Kbytes 页数：2 Pages

ISC

无锡固电