丝印：8N10GXXXXXX；Package：SOT-89；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 8N10G SOT-89 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) @10V (typ) ID 100V 120mΩ 8A ● High density cell design for ultra low Rdson ● Fully ch

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