丝印：8N10GXXXXXX；Package：SOT-89；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The 8N10G SOT-89 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) @10V (typ) ID 100V 120mΩ 8A ● High density cell design for ultra low Rdson ● Fully ch

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TUOFENG

拓锋半导体

8 Amps,100 Volts N-CHANNEL Power MOSFET

文件：511.29 Kbytes 页数：7 Pages

CHONGQING

平伟实业

TMOS POWER FETs 8AMPERES

文件：124.46 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电