TF8N10G

Marking：8N10GXXXXXX；Package：SOT-89；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The8N10GSOT-89usesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures VDSSRDS(ON)@10V(typ)ID 100V120mΩ8A ●HighdensitycelldesignforultralowRdson ●Fullych

8N10P

8Amps,100VoltsN-CHANNELPowerMOSFET

MTP8N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=8A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP8N10

TMOSPOWERFETs8AMPERES

MTP8N10E

TMOSPOWERFETs8AMPERES

PJD8N10

100VN-ChannelMOSFET

SSG8N10

N-Channel100V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •ExtremelyLowQgdforSwitchingLosses •100RgTested •100AvalancheTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

SSG8N10

N-ChEnhancementModePowerMOSFET

STD8N10L

N-Channel100V(D-S)MOSFET

STD8N10L

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.25Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWINPUTCAPACITANCE ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPEARTINGTEMPERATURE ■APPLICATION