8A, 1000V N-CHANNEL POWER MOSFET

The UTC 8N100-C provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. RDS(ON) < 1.45Ω @ VGS=10V, ID=4.0ALow Reverse Transfer Capacitance Fast Switching CapabilityAvalanche Energy SpecifiedImproved dv/dt Capability, High Ruggedness;

UTC

友顺

Planar Power MOSFET  (N-CH)

UTC

友顺

N-Channel Enhancement Mode MOSFET

文件：469.92 Kbytes 页数：4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件：342.84 Kbytes 页数：4 Pages

DACO

罡境电子

N-Channel MOSFET

FEATURES ·Drain Current -ID= 8A@ TC=25℃ ·Drain Source Voltage -VDSS= 1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.45Ω(Max)@VGS= 10V APPLICATIONS ·motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.4 Kbytes 页数：3 Pages

ISC

无锡固电