丝印：86336D；Package：VSON-CLIP；CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件：941.69 Kbytes 页数：29 Pages

TI

德州仪器

丝印：86336D；Package：VSON-CLIP；CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件：941.69 Kbytes 页数：29 Pages

TI

德州仪器

丝印：86336D；Package：VSON-CLIP；CSD86336Q3D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 12 A • Up to 20-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 3.3-mm × 3.3-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low-Inductance Package • RoHS Compliant

文件：941.69 Kbytes 页数：29 Pages

TI

德州仪器

丝印：86350D；Package：LSON-CLIP(DQY)；CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件：1.27032 Mbytes 页数：29 Pages

TI

德州仪器

丝印：86350D；Package：LSON-CLIP(DQY)；CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件：1.27032 Mbytes 页数：29 Pages

TI

德州仪器

丝印：86350D；Package：LSON-CLIP(DQY)；CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件：1.27032 Mbytes 页数：29 Pages

TI

德州仪器

丝印：86350D；Package：LSON-CLIP(DQY)；CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件：1.27032 Mbytes 页数：29 Pages

TI

德州仪器

丝印：86350D；Package：LSON-CLIP(DQY)；CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件：1.27032 Mbytes 页数：29 Pages

TI

德州仪器

丝印：86350D；Package：LSON-CLIP(DQY)；CSD86350Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 90% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • Hal

文件：1.27032 Mbytes 页数：29 Pages

TI

德州仪器

丝印：86356D；Package：VSON-CLIP；CSD86356Q5D Synchronous Buck NexFET™ Power Block

1 Features 1• Half-Bridge Power Block • 93.0% System Efficiency at 25 A • Up to 40-A Operation • High-Frequency Operation (Up to 1.5 MHz) • High-Density SON 5-mm × 6-mm Footprint • Optimized for 5-V Gate Drive • Low-Switching Losses • Ultra-Low Inductance Package • RoHS Compliant • H

文件：974.33 Kbytes 页数：30 Pages

TI

德州仪器