NVTFS6H860NTAG

Marking：860N；Package：WDFN8；MOSFET - Power, Single N-Channel 80 V, 21.1 m, 33 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVTFS6H860NWF−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

RM86N150DF

Marking：86NF；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

GeneralFeature VDS=150V,ID=86A RDS(ON)

TLV1861QDBVRQ1

Marking：861Q；Package：SOT-23；TLV185x-Q1 and TLV186x-Q1 Family of 40 V, Nanopower Comparators

1Features •Qualifiedforautomotiveapplications •AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade1:–40°Cto125°C ambientoperatingtemperaturerange –DeviceHBMESDclassificationlevelH1C –DeviceCDMESDclassificationlevelC6 •Lowsupplycurrent:440n

TPCP8601

Marking：8601；Package：PS-13；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCP8602

Marking：8602；Package：PS-15；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCP8603

Marking：8603；Package：PS-14；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCP8605

Marking：8605；Package：PS-8；Bipolar Transistors Silicon PNP Epitaxial Type

Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=200to500(VCE=-2V,IC=-0.5A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.27V(max)(IC=-1.6A,IB=-53mA) (3)High-speedswitching:tf=60ns(typ.)(IC=-1.6A)

TPCP8606

Marking：8606；Package：PS-8；Bipolar Transistors Silicon PNP Epitaxial Type

Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=100to200(VCE=-2V,IC=-0.4A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.22V(max)(IC=-1.2A,IB=-0.12A) (3)High-speedswitching:tf=35ns(typ.)(IC=-1.2A)

TPCP8607

Marking：8607；Package：PS-8；Bipolar Transistors Silicon PNP Epitaxial Type

Applications •High-SpeedSwitching •DC-DCConverters Features (1)HighDCcurrentgain:hFE=120to240(VCE=-2V,IC=-0.25A) (2)Lowcollector-emittersaturationvoltage:VCE(sat)=-0.32V(max)(IC=-0.75A,IB=-75mA) (3)High-speedswitching:tf=65ns(typ.)(IC=-0.75A

TPSM861252RDXR

Marking：861252；Package：QFN-FCMOD；TPSM86125x 3V to 17V Input, 1A, Synchronous Buck Module in QFN Package

1Features •Configuredforawiderangeofapplications –3Vto17Vwideinputvoltagerange –Fixed3.3VoutputforTPSM861253 –0.6Vto10VoutputrangeforTPSM861252 –0.6Vto5.5VoutputrangeforTPSM861257 –0.6Vreferencevoltage –±1for0.6Vrefaccuracyat25°C –±1.5for0.6Vre