丝印：858Z；Package：WQFN(RTE)；DACx0508 Octal, 16-, 14-, 12-Bit, SPI, Voltage Output DAC with Internal Reference

1 Features 1• Performance – INL: ±1 LSB Maximum at 16-Bit Resolution – TUE: ±0.1% of FSR Maximum • Integrated 2.5 V Precision Internal Reference – Initial Accuracy: ±5 mV Maximum – Low Drift: 2 ppm/°C Typical, DAC80508 • High Drive Capability: 20 mA with 0.5 V from Supply Rails • Flex

文件：5.0474 Mbytes 页数：59 Pages

TI

德州仪器

丝印：858Z；Package：WQFN(RTE)；DACx0508 Octal, 16-, 14-, 12-Bit, SPI, Voltage Output DAC with Internal Reference

1 Features 1• Performance – INL: ±1 LSB Maximum at 16-Bit Resolution – TUE: ±0.1% of FSR Maximum • Integrated 2.5 V Precision Internal Reference – Initial Accuracy: ±5 mV Maximum – Low Drift: 2 ppm/°C Typical, DAC80508 • High Drive Capability: 20 mA with 0.5 V from Supply Rails • Flex

文件：5.0474 Mbytes 页数：59 Pages

TI

德州仪器

丝印：858Z；Package：WQFN(RTE)；DACx0508 Octal, 16-, 14-, 12-Bit, SPI, Voltage Output DAC with Internal Reference

1 Features 1• Performance – INL: ±1 LSB Maximum at 16-Bit Resolution – TUE: ±0.1% of FSR Maximum • Integrated 2.5 V Precision Internal Reference – Initial Accuracy: ±5 mV Maximum – Low Drift: 2 ppm/°C Typical, DAC80508 • High Drive Capability: 20 mA with 0.5 V from Supply Rails • Flex

文件：5.0474 Mbytes 页数：59 Pages

TI

德州仪器

丝印：858Z；Package：WQFN(RTE)；DACx0508 Octal, 16-, 14-, 12-Bit, SPI, Voltage Output DAC with Internal Reference

1 Features 1• Performance – INL: ±1 LSB Maximum at 16-Bit Resolution – TUE: ±0.1% of FSR Maximum • Integrated 2.5 V Precision Internal Reference – Initial Accuracy: ±5 mV Maximum – Low Drift: 2 ppm/°C Typical, DAC80508 • High Drive Capability: 20 mA with 0.5 V from Supply Rails • Flex

文件：5.0474 Mbytes 页数：59 Pages

TI

德州仪器

丝印：858Z；Package：WQFN(RTE)；DACx0508 Octal, 16-, 14-, 12-Bit, SPI, Voltage Output DAC with Internal Reference

1 Features 1• Performance – INL: ±1 LSB Maximum at 16-Bit Resolution – TUE: ±0.1% of FSR Maximum • Integrated 2.5 V Precision Internal Reference – Initial Accuracy: ±5 mV Maximum – Low Drift: 2 ppm/°C Typical, DAC80508 • High Drive Capability: 20 mA with 0.5 V from Supply Rails • Flex

文件：5.0474 Mbytes 页数：59 Pages

TI

德州仪器

丝印：858LWF；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 19.5 m, 30 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H858NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：186.44 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：858NWF；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 20.7 m, 32 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H858NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.58 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：858MC；Package：WQFN；Octal, 16-, 14-, 12-Bit, SPI, Voltage Output DAC with Internal Reference

文件：2.99836 Mbytes 页数：55 Pages

TI

德州仪器

丝印：858MC；Package：WQFN；Octal, 16-, 14-, 12-Bit, SPI, Voltage Output DAC with Internal Reference

文件：2.99836 Mbytes 页数：55 Pages

TI

德州仪器

丝印：858M；Package：WQFN；Octal, 16-, 14-, 12-Bit, SPI, Voltage Output DAC with Internal Reference

文件：2.99836 Mbytes 页数：55 Pages

TI

德州仪器