COAXIAL CONNECTOR, SHV, 50 Ohm, Straight bulkhead receptacle, jack (female)

Properties • Suitable for all high voltage applications up to 5 kV DC or 3.5 kV rms • Used in nuclear instruments or test and measurement equipment • Voltages are valid for both, the mated and the unmated condition.

文件：1.28394 Mbytes 页数：2 Pages

HUBERSUHNER

COAXIAL CONNECTOR, QN, 50 Ohm, Straight cable plug (male)

Properties Applicable up to 6 GHz

文件：2.26926 Mbytes 页数：2 Pages

HUBERSUHNER

COAXIAL CONNECTOR, SMA, 50 Ohm, Straight panel receptacle, jack (female), flange mount

Properties • Excellent return loss • Intermateable with PC3.5 and SK • Applicable in frequencies up to 18 GHz

文件：290.42 Kbytes 页数：2 Pages

HUBERSUHNER

2K x 8 CMOS RAM

Features • Low Power Standby. . . . . . . . . . . . . . . . . . . 275μW Max • Low Power Operation . . . . . . . . . . . . . .55mW/MHz Max • Fast Access Time . . . . . . . . . . . . . . . . . 120/200ns Max • Industry Standard Pinout • Single Supply . . . . . . . . . . . . . . . . . . . . . . .

文件：84.26 Kbytes 页数：6 Pages

RENESAS

瑞萨

2K x 8 CMOS RAM

Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, which

文件：31.93 Kbytes 页数：6 Pages

INTERSIL

2K x 8 CMOS RAM

Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the active (operating) power low, which

文件：31.93 Kbytes 页数：6 Pages

INTERSIL

2K x 8 CMOS RAM

Features • Low Power Standby. . . . . . . . . . . . . . . . . . . 275μW Max • Low Power Operation . . . . . . . . . . . . . .55mW/MHz Max • Fast Access Time . . . . . . . . . . . . . . . . . 120/200ns Max • Industry Standard Pinout • Single Supply . . . . . . . . . . . . . . . . . . . . . . .

文件：84.26 Kbytes 页数：6 Pages

RENESAS

瑞萨

2K x 8 Asynchronous CMOS Static RAM

Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. Features • Fast Access Time . . . . . . . . . . . . . . . . . . 70/90ns M

文件：42.81 Kbytes 页数：7 Pages

INTERSIL

2K x 8 Asynchronous CMOS Static RAM

Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. Features • Fast Access Time . . . . . . . . . . . . . . . . . . 70/90ns M

文件：42.81 Kbytes 页数：7 Pages

INTERSIL

2K x 8 Asynchronous CMOS Static RAM

Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. Features • Fast Access Time . . . . . . . . . . . . . . . . . . 70/90ns M

文件：42.81 Kbytes 页数：7 Pages

INTERSIL