丝印：8330；Package：DSBGA；LM8330 I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection

1FEATURES 2• KEY FEATURES – Keypad Matrices of up to of 8 x 12 Keys, Plus 8 Special Function (SF) Keys, for a Full 104 Key Support. – Supports General-purpose I/O Expansion on Pins Not Otherwise Used for Keypad or PWM Output. – Keypad Matrix and Dedicated Key Support: – 16-Event Keycode B

文件：726.88 Kbytes 页数：54 Pages

TI

德州仪器

丝印：8330；Package：DSBGA；LM8330 I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection

1FEATURES 2• KEY FEATURES – Keypad Matrices of up to of 8 x 12 Keys, Plus 8 Special Function (SF) Keys, for a Full 104 Key Support. – Supports General-purpose I/O Expansion on Pins Not Otherwise Used for Keypad or PWM Output. – Keypad Matrix and Dedicated Key Support: – 16-Event Keycode B

文件：726.88 Kbytes 页数：54 Pages

TI

德州仪器

丝印：8330；Package：DSBGA；LM8330 I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection

1FEATURES 2• KEY FEATURES – Keypad Matrices of up to of 8 x 12 Keys, Plus 8 Special Function (SF) Keys, for a Full 104 Key Support. – Supports General-purpose I/O Expansion on Pins Not Otherwise Used for Keypad or PWM Output. – Keypad Matrix and Dedicated Key Support: – 16-Event Keycode B

文件：726.88 Kbytes 页数：54 Pages

TI

德州仪器

丝印：8330；Package：DSBGA；LM8330 I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection

1FEATURES 2• KEY FEATURES – Keypad Matrices of up to of 8 x 12 Keys, Plus 8 Special Function (SF) Keys, for a Full 104 Key Support. – Supports General-purpose I/O Expansion on Pins Not Otherwise Used for Keypad or PWM Output. – Keypad Matrix and Dedicated Key Support: – 16-Event Keycode B

文件：726.88 Kbytes 页数：54 Pages

TI

德州仪器

丝印：8330；Package：DSBGA；LM8330 I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection

1FEATURES 2• KEY FEATURES – Keypad Matrices of up to of 8 x 12 Keys, Plus 8 Special Function (SF) Keys, for a Full 104 Key Support. – Supports General-purpose I/O Expansion on Pins Not Otherwise Used for Keypad or PWM Output. – Keypad Matrix and Dedicated Key Support: – 16-Event Keycode B

文件：726.88 Kbytes 页数：54 Pages

TI

德州仪器

丝印：8330；Package：DSBGA；LM8330 I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection

1FEATURES 2• KEY FEATURES – Keypad Matrices of up to of 8 x 12 Keys, Plus 8 Special Function (SF) Keys, for a Full 104 Key Support. – Supports General-purpose I/O Expansion on Pins Not Otherwise Used for Keypad or PWM Output. – Keypad Matrix and Dedicated Key Support: – 16-Event Keycode B

文件：726.88 Kbytes 页数：54 Pages

TI

德州仪器

丝印：8330；Package：DSBGA；LM8330 I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection

1FEATURES 2• KEY FEATURES – Keypad Matrices of up to of 8 x 12 Keys, Plus 8 Special Function (SF) Keys, for a Full 104 Key Support. – Supports General-purpose I/O Expansion on Pins Not Otherwise Used for Keypad or PWM Output. – Keypad Matrix and Dedicated Key Support: – 16-Event Keycode B

文件：726.88 Kbytes 页数：54 Pages

TI

德州仪器

丝印：8330；Package：DSBGA；LM8330 I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection

1FEATURES 2• KEY FEATURES – Keypad Matrices of up to of 8 x 12 Keys, Plus 8 Special Function (SF) Keys, for a Full 104 Key Support. – Supports General-purpose I/O Expansion on Pins Not Otherwise Used for Keypad or PWM Output. – Keypad Matrix and Dedicated Key Support: – 16-Event Keycode B

文件：726.88 Kbytes 页数：54 Pages

TI

德州仪器

丝印：83301；Package：.2502LFL(S010)；RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC83301 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated condi

文件：96.2 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

丝印：83303；Package：.2502LFL(S010)；RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

DESCRIPTION The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated condi

文件：93.34 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体