丝印：8163；Package：VSSOP(DGS)；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

文件：2.12523 Mbytes 页数：63 Pages

TI

德州仪器

丝印：8163；Package：VSSOP(DGS)；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

文件：2.12523 Mbytes 页数：63 Pages

TI

德州仪器

丝印：8163；Package：VSSOP(DGS)；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

文件：2.12523 Mbytes 页数：63 Pages

TI

德州仪器

丝印：8163；Package：VSSOP(DGS)；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

文件：2.12523 Mbytes 页数：63 Pages

TI

德州仪器

丝印：8163；Package：WSON(DSC)；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

文件：2.12523 Mbytes 页数：63 Pages

TI

德州仪器

丝印：8163；Package：WSON(DSC)；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

文件：2.12523 Mbytes 页数：63 Pages

TI

德州仪器

丝印：8163；Package：WSON(DSC)；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

文件：2.12523 Mbytes 页数：63 Pages

TI

德州仪器

丝印：8163；Package：WSON(DSC)；DACxx6x Dual 16-, 14-, 12-Bit, Low-Power, Buffered, Voltage-Output DACs With 2.5-V, 4-PPM/°C Internal Reference

1 Features 1• Relative Accuracy: – DAC756x (12-Bit): 0.3 LSB INL – DAC816x (14-Bit): 1 LSB INL – DAC856x (16-Bit): 4 LSB INL • Glitch Impulse: 0.1 nV-s • Bidirectional Reference: Input or 2.5-V Output – Output Disabled by Default – ±5-mV Initial Accuracy (Max) – 4-ppm°C Temperature Drift

文件：2.12523 Mbytes 页数：63 Pages

TI

德州仪器

丝印：8161；Package：VSSOP；DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.00266 Mbytes 页数：50 Pages

TI

德州仪器

丝印：8161；Package：VSSOP；DRV816x 100V Half-Bridge Smart Gate Driver with Integrated Protection and Current Sense Amplifier

1 Features • Drives two N-channel MOSFETs in half-bridge configuration – High-side MOSFET source/drain up to 102V (absolute max) – 8V (5V DRV8162L) to 20V gate drive power supply – Integrated bootstrap diode • Functional Safety Quality-Managed – Documentation available to aid functional s

文件：2.18173 Mbytes 页数：52 Pages

TI

德州仪器