Fast Switching Speed

文件：67.88 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：1.28925 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

80A, 60V  N-CHANNEL  POWER MOSFET

The UTC 80N06 is an N-channel mode power MOSFET usingUTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. RDS(ON) < 8.5mΩ @ VGS = 10 V, ID = 40 ATrench FET Power MOSFETS Technology;

UTC

友顺

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：1.59467 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：1.2892 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：1.28926 Mbytes 页数：7 Pages

VBSEMI

微碧半导体

丝印：80N06SA；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：485.82 Kbytes 页数：6 Pages

PANJIT

強茂