丝印：7V；Package：X2-DFN1010-4；300mA HIGH PSRR LOW NOISE LDO WITH ENABLE

Description The AP7343 is a low dropout regulator with high output voltage accuracy, low RDS(ON), high PSRR, low output noise and low quiescent current. This regulator is based on a CMOS process. The AP7343 includes a voltage reference, error amplifier, current limit circuit and an enable input

文件：1.3022 Mbytes 页数：18 Pages

DIODES

美台半导体

丝印：7V；Package：SOT25；300mA HIGH PSRR LOW NOISE LDO WITH ENABLE

Description The AP7343 is a low dropout regulator with high output voltage accuracy, low RDS(ON), high PSRR, low output noise and low quiescent current. This regulator is based on a CMOS process. The AP7343 includes a voltage reference, error amplifier, current limit circuit and an enable input

文件：1.3022 Mbytes 页数：18 Pages

DIODES

美台半导体

丝印：7V；Package：SOT-323；Silicon PNP General Purpose Transistors

Features  Silicon PNP Epitaxial type  Excellent DC current gain characteristics  General purpose amplifier application  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: BC817W-AU series

文件：517.919 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：7V；Package：SOD882BD；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：257.07 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：7V；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：258.089 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：7V；Package：SOT23；50 V, 500 mA NPN resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

1. General description NPN 500 mA Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113ZT 2. Features and benefits • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place

文件：897.26 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：7V；Package：SOT23；NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ

1. General description NPN 500 mA Resistor-Equipped Transistor (RET) in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: PDTB113ZT 2. Features and benefits • Built-in bias resistors • Reduces component count • Simplifies circuit design • Reduces pick and place

文件：201.28 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：7V；Package：WSON；Low Quiescent Current, 1 Accurate Supervisor with Programmable Delay

文件：1.04838 Mbytes 页数：26 Pages

TI

德州仪器

Silicon Epitaxial Planar Zener Diodes

BC Series Silicon Epitaxial Planar Zener Diodes

文件：306.57 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

Silicon Epitaxial Planar Zener Diodes

BC Series Silicon Epitaxial Planar Zener Diodes

文件：306.57 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体