丝印：7U；Package：SOD882BD；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：257.07 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7U；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：258.089 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7U；Package：SOT23；PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 1 kΩ

Features and benefits * 500 mA output current capability * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place costs * ±10 resistor ratio tolerance * AEC-Q101 qualified

文件：239.6 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：7U；Package：SC-70；IVN Bus Protector, Single Line LIN & Dual Line CAN

文件：452.24 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：7U；Package：SC-70；IVN Bus Protector, Single Line LIN & Dual Line CAN

文件：452.24 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：7U；Package：WSON；Low Quiescent Current, 1 Accurate Supervisor with Programmable Delay

文件：1.04838 Mbytes 页数：26 Pages

TI

德州仪器

丝印：7U.P；Package：SOT323；Can bus ESD Protection Diode

Features | «Ultra low leakage: nA level «Operating voltage: 24V «Low clamping voltage «Complies with following standards: — IEC 61000-4-2 (ESD) immunity test Air discharge: +30kV Contact discharge: +30kV ~ [EC61000-4-4 (EFT) 40A (5/50ns) ~IEC61000-4-5 (Lightning) 4A (8/20ps) «RoHS

文件：1.17639 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：7UW；Package：SOD-323；General Purpose Un-directional TVS

文件：157.87 Kbytes 页数：3 Pages

E-CMOS

飞虹高科

丝印：7UYYWW；Ultra-Low Capacitance ESD Protection Device

文件：1.18306 Mbytes 页数：6 Pages

LUGUANG

鲁光电子

丝印：M1；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input NAND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to 3.6 V

文件：181.25 Kbytes 页数：10 Pages

TOSHIBA

东芝