74404052075

Marking：7R5；WE-LQS SMT Semi-Shielded Power Inductor

GeneralInformation: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

74488540070

Marking：7R0；WE-EHPI Energy Harvesting Coupled Inductor

GeneralProperties: AmbientTemperature(referring toIR)-40upto+85°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

GAN7R0-150LBE

Marking：7R0ELBE；Package：SOT8073-1；150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package

1.Generaldescription TheGAN7R0-150LBEisageneralpurpose150V,7mΩGalliumNitride(GaN)FETinaLandGrid Array(LGA)package.Itisanormally-offe-modedeviceofferingsuperiorperformance. 2.Featuresandbenefits •Enhancementmode-normally-offpowerswitch •Ultrahighfreque

SDIA4030-7R5M

Marking：7R5；SLIM INDUCTOR-RoHS

TPRH10D40-7R0

Marking：7R0；SMD POWER INDUCTOR-RoHS

TPRH6D38-7R4

Marking：7R4；SMD POWER INDUCTOR-RoHS

TPRH8D28-7R3

Marking：7R3；SMD POWER INDUCTOR-RoHS