丝印：7N80；Package：TO-220F；800V N-Channel Planar MOSFET

Features RDSON=1.3Ω @Vgs=10V, Id=3.5A Low gate Charge(typical 34.6nC) Low Crss (typical 5.1pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Halogen free and RoHS compliant Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power

文件：2.65688 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：7N80；Package：TO-220；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：906.09 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：7N80；Package：TO-220F；N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES • Low Crss • Low gate charge • Fast switching • Improved ESD capability • Improved dv/dt capability • 100% avalanche energy test

文件：906.09 Kbytes 页数：9 Pages

RECTRON

丽正国际

丝印：7N80；Package：TO-220C；7A 800V N-channel Enhancement Mode Power MOSFET

文件：900.32 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N80；Package：TO-220C；7A 800V N-channel Enhancement Mode Power MOSFET

文件：899.86 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N80；Package：TO-220C；7A 800V N-channel Enhancement Mode Power MOSFET

文件：900.46 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N80；Package：TO-220C；7A 800V N-channel Enhancement Mode Power MOSFET

文件：901.09 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N80AT；Package：TO-220AB；7A 800V N-channel enhanced field effect transistor

文件：938.34 Kbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：7N80AF；Package：TO-220F(0.5mm)；7A 800V N-channel enhanced field effect transistor

文件：938.34 Kbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：7N80AS；Package：TO-263；7A 800V N-channel enhanced field effect transistor

文件：938.34 Kbytes 页数：6 Pages

YFWDIODE

佑风微