7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

文件：297.02 Kbytes 页数：7 Pages

UTC

友顺

7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：280.9 Kbytes 页数：7 Pages

UTC

友顺

Fast Switching Speed

文件：65.53 Kbytes 页数：2 Pages

ISC

无锡固电

7A 600V N-channel enhanced field effect transistor

文件：1.06531 Mbytes 页数：7 Pages

YFWDIODE

佑风微

7A, 600V N-CHANNEL POWER MOSFET

文件：250.51 Kbytes 页数：7 Pages

UTC

友顺

600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

文件：204.5 Kbytes 页数：8 Pages

Fairchild

仙童半导体

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

文件：168.06 Kbytes 页数：11 Pages

Intersil

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

文件：297.02 Kbytes 页数：7 Pages

UTC

友顺

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

文件：297.02 Kbytes 页数：7 Pages

UTC

友顺

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

文件：297.02 Kbytes 页数：7 Pages

UTC

友顺