丝印：7N60；Package：TO-220C；7A 600V N-channel Enhancement Mode Power MOSFET

文件：898.89 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N60；Package：TO-220C；7A 600V N-channel Enhancement Mode Power MOSFET

文件：898.89 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N60；Package：TO-220C；7A 600V N-channel Enhancement Mode Power MOSFET

文件：899.52 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N60；Package：TO-220C；7A 600V N-channel Enhancement Mode Power MOSFET

文件：898.85 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：7N600；Package：TO251；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Uitra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free

文件：988.92 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：7N600；Package：TO252；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Uitra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free

文件：988.92 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：7N600；Package：TO-252-2L；N-Channel Power MOSFET

Features 600V, 7A, RDS(ON)(Max.)= 1.3Ω@VGS =10V. Low Crss Fast Switching 100% Avalanche Tested

文件：553.74 Kbytes 页数：6 Pages

RECTRON

丽正国际

丝印：7N60M6；Package：DPAK；N-channel 600 V, 780 mΩ typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh M6 technology incorporate

文件：384.39 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：7N60AT；Package：TO-220AB；7A 600V N-channel enhanced field effect transistor

文件：1.06531 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：7N60AF；Package：TO-220F；7A 600V N-channel enhanced field effect transistor

文件：1.06531 Mbytes 页数：7 Pages

YFWDIODE

佑风微