650V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

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FAIRCHILD

仙童半导体

HiPerFAST IGBT

Features • International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB • Medium frequency IGBT • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • Uninterruptible power supplies (UPS) •

文件：84.88 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel Power MOSFET

DESCRIPTION The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power su

文件：678.82 Kbytes 页数：8 Pages

NELLSEMI

尼尔半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件：349.51 Kbytes 页数：9 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件：205.31 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL ENHANCEMENT MODE

文件：205.31 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件：204.93 Kbytes 页数：6 Pages

UTC

友顺

N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS

文件：341.65 Kbytes 页数：8 Pages

UTC

友顺

7A, 600V N-CHANNEL POWER MOSFET

文件：250.51 Kbytes 页数：7 Pages

UTC

友顺

7A mps,600 Volts N-CHANNEL MOSFET

FEATURE ● 7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：193.27 Kbytes 页数：2 Pages

CHONGQING

平伟实业