丝印：7H2140PWP；Package：HTSSOP；TPS7H2140-SEP Radiation-Tolerant 32-V, 160-mΩ Quad-Channel eFuse

1 Features • Vendor item drawing available, VID V62/23610 • Total ionizing dose (TID) characterized to 30 krad(Si) – RLAT (radiation lot acceptance testing) to 20 krad(Si) • Single-event effects (SEE) characterized – Single-event latch-up (SEL), single-event burnout (SEB), and single-event

文件：2.29267 Mbytes 页数：37 Pages

TI

德州仪器

丝印：7H2140PWP；Package：HTSSOP；TPS7H2140-SEP Radiation-Tolerant 32-V, 160-mΩ Quad-Channel eFuse

1 Features • Vendor item drawing available, VID V62/23610 • Total ionizing dose (TID) characterized to 30 krad(Si) – RLAT (radiation lot acceptance testing) to 20 krad(Si) • Single-event effects (SEE) characterized – Single-event latch-up (SEL), single-event burnout (SEB), and single-event

文件：2.29267 Mbytes 页数：37 Pages

TI

德州仪器

丝印：7H2140PWP；Package：HTSSOP；TPS7H2140-SEP Radiation-Tolerant 32-V, 160-mΩ Quad-Channel eFuse

1 Features • Vendor item drawing available, VID V62/23610 • Total ionizing dose (TID) characterized to 30 krad(Si) – RLAT (radiation lot acceptance testing) to 20 krad(Si) • Single-event effects (SEE) characterized – Single-event latch-up (SEL), single-event burnout (SEB), and single-event

文件：2.29267 Mbytes 页数：37 Pages

TI

德州仪器