丝印：7H6025DCA；Package：HTSSOP；TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers

1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran

文件：2.26321 Mbytes 页数：49 Pages

TI

德州仪器

丝印：7H6025DCA；Package：HTSSOP；TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers

1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran

文件：2.26459 Mbytes 页数：49 Pages

TI

德州仪器

丝印：7H6025DCA；Package：HTSSOP；TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers

1 Features • Radiation performance: – Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si) – Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg – Single-event tran

文件：2.26459 Mbytes 页数：49 Pages

TI

德州仪器