射频卡芯片

3M

包装：托盘 类别：RF/IF，射频/中频和 RFID RFID 应答器、标签 描述：3M ELECTRONIC MARKING SYSTEM (EM

3M

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de

文件：110.16 Kbytes 页数：10 Pages

INTERSIL

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This de

文件：287.03 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：289.35 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：108.87 Kbytes 页数：10 Pages

INTERSIL

75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：121.18 Kbytes 页数：10 Pages

INTERSIL

75A, 30V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：293.21 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

VHDM짰 H-Series Board-to-Board Backplane Header, 2.00mm (.079) Pitch, Vertical, 8-Row, Open Signal Module, 80 Circuits, Advance Mate Shield

文件：318.15 Kbytes 页数：4 Pages

MOLEX

莫仕

2.00mm (.079) Pitch VHDM짰 H Board-to-Board Backplane Header, Vertical, 8-Row, Signal Module, Open End Version, 200 Circuits

文件：317.23 Kbytes 页数：4 Pages

MOLEX

莫仕