丝印：7612；Package：TSSOP；TMUX7612 50V, Low-RON, 1:1 (SPST), 4-Channel Precision Switches with 1.8V Logic

1 Features • Dual supply range: ±4.5V to ±25V • Single supply range: 4.5V to 50V • Asymmetric dual supply support (For example: VDD = 37.5V, VSS = -12.5V) • 1.8V logic compatible • Precision performance: – Low on-resistance: 1.1Ω (typical) – Low capacitance: 27pF (typical) – Ultra-low on-

文件：2.4984 Mbytes 页数：54 Pages

TI

德州仪器

射频卡芯片

3M

包装：托盘 类别：RF/IF，射频/中频和 RFID RFID 应答器、标签 描述：3M ELECTRONIC MARKING SYSTEM (EM

3M

Reduced-Diameter VFD Cable; 600V/1000V; UL & c(UL) TC-ER Approval

Recommended Applications VFD drive and motor applications; web presses; HVAC; conveyors; any on/off, slow down/speed up applications using VFD drives and motors Application Advantage • Lapp Surge Guard insulation protection • UL TC-ER & c(UL) CIC/TC approved • Double shielded for extra prot

文件：637.81 Kbytes 页数：1 Pages

LAPP

缆普

Diagonal Cutter For electromechanics

General Article No. 76 12 125 EAN 4003773048015 Pliers black atramentized Head polished Handles with multi-component grips Weight 112 g Dimensions 125 x 60 x 19 mm Standard DIN ISO 5749 Reach no RohS no

文件：118.67 Kbytes 页数：2 Pages

KNIPEX

47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：287.68 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：109.4 Kbytes 页数：10 Pages

INTERSIL

20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：282.24 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：108.87 Kbytes 页数：10 Pages

INTERSIL

Projection Television

文件：4.57205 Mbytes 页数：34 Pages

TOSHIBA

东芝