TMUX8212RUMR

TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1Features •Highsupplyvoltagecapable: –Dualsupply:±10Vto±50V –Singlesupply:10Vto100V –Asymmetricdualsupplyoperation •Consistentparametricacrosssupplyvoltages •Latch-upimmune •Highcontinuouscurrent:200mA •Lowcrosstalk:–110dB •Lowinputleakage:10pA

TMUX8212RUMR

TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1Features •Highsupplyvoltagecapable: –Dualsupply:±10Vto±50V –Singlesupply:10Vto100V –Asymmetricdualsupplyoperation •Consistentparametricacrosssupplyvoltages •Latch-upimmune •Highcontinuouscurrent:200mA •Lowcrosstalk:–110dB •Lowinputleakage:10pA

TPC8212-H

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPC8212-H

High-EfficiencyDC/DCConverterApplications

TPCS8212

LithiumIonBatteryApplications

TPCS8212

SiliconNChannelMOSType(U-MOSIII)

LithiumIonBatteryApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=16mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=11S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=20V) •Enhancementmode:Vth=0.5~1.2V(VDS=

UZ8212

POWERZENERS

DESCRIPTION Onewattzenerdiodes,hermeticallysealedinglass. FEATURES •HighSurgeRatings •AQuartertheSizeofConventional1WattZeners •ImpervioustoMoisture

UZ8212

POWERZENERS

DESCRIPTION Onewattzenerdiodes,hermeticallysealedinglass. FEATURES •HighSurgeRatings •AQuartertheSizeofConventional1WattZeners •ImpervioustoMoisture

UZ8212

POWERZENERS

UZ8706,UZ8806SERIES AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

WSP8212

DualN-ChannelMOSFETusesadvancedtrenchtechnology

WSP8212

DualN-ChannelMOSFET