丝印：TMUX8213；Package：WQFN；TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

文件：2.08676 Mbytes 页数：42 Pages

TI

德州仪器

TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

文件：2.058889 Mbytes 页数：42 Pages

TI

德州仪器

TMUX821x 100-V, Flat Ron, 1:1 (SPST), 4-Channel Switches with Latch-Up Immunity and 1.8-V Logic

1 Features • High supply voltage capable: – Dual supply: ±10 V to ±50 V – Single supply: 10 V to 100 V – Asymmetric dual supply operation • Consistent parametric across supply voltages • Latch-up immune • High continuous current: 200 mA • Low crosstalk: –110 dB • Low input leakage: 10 pA

文件：2.058889 Mbytes 页数：42 Pages

TI

德州仪器

High-Efficiency DC竊뢈C Converter Applications

文件：324.79 Kbytes 页数：7 Pages

TOSHIBA

东芝

Dual N-Channel 60 V (D-S) 175 째C MOSFET

文件：1.08897 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Lithium Ion Battery Applications

Lithium Ion Battery Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 13 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement-mode: Vth = 0.5~1.4 V (VDS

文件：208.89 Kbytes 页数：7 Pages

TOSHIBA

东芝