56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：108.87 Kbytes 页数：10 Pages

INTERSIL

20A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and th

文件：282.24 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

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GRAYHILL

上传：深圳市跃创芯科技有限公司

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GRAYHILL

上传：深圳市跃创芯科技有限公司

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GRAYHILL

上传：深圳市跃创芯科技有限公司