Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

文件：128.16 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

文件：226.19 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

HEX INVERTER

DESCRIPTION The 74VHCT04A is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. ■ HIGH SPEED:

文件：52.54 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER

文件：214.42 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：VHCT04A；Package：TSSOP14B；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • Hex Inverter General The 74VHCT04AFT is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The input v

文件：152.52 Kbytes 页数：7 Pages

TOSHIBA

东芝

HEX INVERTER

DESCRIPTION The 74VHCT04A is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output. ■ HIGH SPEED:

文件：52.54 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

文件：128.16 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

文件：226.19 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

文件：226.19 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Hex Inverter

General Description The VHCT04A is an advanced high speed CMOS Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages inc

文件：128.16 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体