丝印：74VHC14；Package：SOIC；Hex Schmitt Inverter

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ONSEMI

安森美半导体

Hex Schmitt Inverter

General Description\nThe ’VHC14 is an advanced high speed CMOS Hex Schmitt Inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent Bi polar Schottky TTL while maintaining the CMOS low power dissipation. Pin configuration and function are the ■ Low power dissipation:\n   ICC e 2 mA (Max) at TA e 25§C\n■ High noise immunity: VNIH e VNIL e 28% VCC (Min)\n■ All inputs are equipped with a power down protection function\n■ Balanced prpagation delays: TPLH j TPHL\n■ Low noise: OLP e 0.8V (Max)\n■ Pin and function compatible with 74HC14;

TI

德州仪器

Hex Schmitt Inverter

The 74VHC14 device is an advanced high-speed CMOS hex Schmitt inverter manufactured with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including a buffer output, which provides high noise immunity and stable output. Power-down pr High speed: t\nPD= 5.5 ns (typ.) at V\nCC= 5 V\nLow power dissipationI\nCC= 2 μA (max.) at T\nA= 25C\n\nTypical hysteresis: V\nh= 1 V at V\nCC= 4.5 V\nPower-down protection on inputsSymmetrical output impedance |I\nOH| = I\nOL= 8 mA (min.)\n\nBalanced propagation delay: t\nPLH≅ t\nPHL\nOperating vol;

ST

意法半导体

六路施密特逆变器

VHC14是一款采用硅栅极CMOS技术制造的先进的高速CMOS六通道施密特反相器。 它实现了与等效双极型肖特基TTL相似的高速运行，同时保持了CMOS低功耗。 引脚配置和功能与VHC04相同，但输入在正向与负向输入阈值之间存在滞后现象，该现象能够缓慢地将输入信号转换为界限清晰、无抖动的输出信号，从而提供比传统门电路更大的噪声容限。 输入保护电路确保0V至7V可应用于输入引脚，无需考虑电源电压。 此器件可用于连接5V至3V系统和两个电源系统（例如备用电池）。 此电路可防止器件因电源和输入电压不匹配而受损。 •高速： VCC = 5V时，tPD = 5.5 ns（典型值）\n•低功耗： TA = 25°C时，ICC = 2 µA（最大值）\n•高抗噪能力： VNIH = VNIL = 28% VCC （最小值）\n•所有输入上都提供掉电保护\n•低噪声： VOLP = 0.8V（最大值）\n•引脚和功能与74HC14兼容;

ONSEMI

安森美半导体

HEX SCHMITT inverter

Description The 74VHC14 is an advanced high-speed CMOS HEX SCHMITT inverter fabricated with submicron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. Power dow

文件：244.63 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Hex Schmitt Inverter

文件：78.78 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Hex Schmitt inverter

Features ■ High speed: tPD = 5.5 ns (typ.) at VCC = 5 V ■ Low power dissipation – ICC = 2 μA (max.) at TA = 25 °C ■ Typical hysteresis: Vh = 1 V at VCC = 4.5 V ■ Power-down protection on inputs – Symmetrical output impedance |IOH| = IOL = 8 mA (min.) ■ Balanced propagation delay: tPLH ≅ tP

文件：265.54 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Hex inverting Schmitt trigger

General description The 74VHC14; 74VHCT14 are a high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A. The 74VHC14; 74VHCT14 provide six inverting buffers with Schmitt-trigger action. They are capab

文件：623.43 Kbytes 页数：16 Pages

NEXPERIA

安世

Hex inverting Schmitt trigger

General description The 74VHC14; 74VHCT14 are a high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard No. 7A. The 74VHC14; 74VHCT14 provide six inverting buffers with Schmitt-trigger action. They are capab

文件：623.43 Kbytes 页数：16 Pages

NEXPERIA

安世

HEX SCHMITT INVERTER

DESCRIPTION The 74VHC14 is an advanced high-speed CMOS HEX SCHMITT INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. ■ HIGH S

文件：220 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体